Professor Teldo Anderson da Silva Pereira

@article{Almeida2024,

title = {Propriedades eletrônicas e topológicas do antimoneno sob efeito de tensão: uma abordagem por cálculos de primeiros princípios},

author = {L. Almeida and Teldo A. S. Pereira and Erika Nascimento Lima},

doi = {10.59396/29651964jmfis.7-2.27.2024},

issn = {2965-1964},

year  = {2024},

date = {2024-12-09},

urldate = {2024-00-00},

journal = {JMFis},

volume = {07},

number = {02},

pages = {27--32},

publisher = {Programa de Pós-Graduação em Física, Universidade Federal de Mato Grosso},

abstract = {Neste estudo, utilizamos cálculos baseados na teoria do funcional da densidade (DFT) para investigar as propriedades eletrônicas do antimoneno sob tração biaxial. Observamos que uma tensão de 2% induz uma transição de gap indireto para direto, que persiste até o fechamento do gap em 11%. Acima desse valor, o material volta a exibir gap indireto e passa a se comportar como um isolante topológico, confirmado pelo invariante Z2=1. Esses resultados demonstram a versatilidade do antimoneno e seu potencial para aplicações em nanoeletrônica e spintrônica.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{daSilvaBarboza2024,

title = {Electronic, Excitonic, and Optical Properties of Zinc Blende Boron Arsenide Tuned by Hydrostatic Pressure},

author = {Elisangela da Silva Barboza and Alexandre C. Dias and Luis Craco and Sabrina S. Carara and Diego R. da Costa and Teldo A. S. Pereira},

doi = {10.1021/acsomega.4c07598},

issn = {2470-1343},

year  = {2024},

date = {2024-12-03},

urldate = {2024-12-03},

journal = {ACS Omega},

volume = {9},

number = {48},

pages = {47710--47718},

publisher = {American Chemical Society (ACS)},

abstract = {Based on first-principles calculations combined with a maximally localized Wannier function tight-binding method and the Bethe–Salpeter equation formalism, we theoretically investigate the effects of hydrostatic pressure on the electronic, excitonic, and optical properties of zinc blende boron arsenide. Our findings show: (i) a pressure-induced semiconductor-to-metallic phase transition without causing any change in the structural crystallographic ordering, (ii) a decrease in excitonic binding energy with increasing pressure as a consequence of band gap engineering, and (iii) a small excitonic response in the indirect absorption regime due to the indirect band gap.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Lara2025,

title = {Type-II induced quantum confinement in type-I heterostructured semiconductor nanowires},

author = {Temerson F.O. Lara and Diego R. da Costa and Alice R. de Almeida and Ariel A. de Sousa and André J. Chaves and Andrey Chaves and Teldo A. S. Pereira},

doi = {10.1016/j.physe.2024.116132},

issn = {1386-9477},

year  = {2024},

date = {2024-11-09},

urldate = {2024-11-09},

journal = {Physica E: Low-dimensional Systems and Nanostructures},

volume = {166},

publisher = {Elsevier BV},

abstract = {We theoretically investigate the electronic properties of semiconductor nanowires with axial heterostructure. We employ the effective mass approximation within envelope wavefunction formalism to analyze the behavior of charge carriers in nanowires composed of two semiconductor materials with different energy gaps, grown along the wire axis, with a cylindrically symmetric shape. We start by considering a type-I band alignment, resulting in the formation of a quantum well structure. Then, we demonstrate that modifications in the effective mass and the structural parameters of the system make it possible to change the type of the band alignment, thus dictating the carrier confinement. For certain values of the wire radius and the ratio of effective masses between the well and barrier regions, the contribution of the kinetic energy term to the total effective confinement potential becomes predominant compared to the mismatched band potential. This leads to a switching in the preferential spatial distribution of the wave functions towards the barrier region, exhibiting characteristics of a type-II induced axial junction.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{doi:10.1021/acsomega.4c03861,

title = {Stability and Optoelectronic Properties of Two-Dimensional Gallium Phosphide},

author = {Elisangela Silva Barboza and Kessia L. M. Cruz and Ramon S. Ferreira and Alexandre C. Dias and Erika Nascimento Lima and Diego R. Costa and Teldo A. S. Pereira},

url = {https://doi.org/10.1021/acsomega.4c03861},

doi = {10.1021/acsomega.4c03861},

year  = {2024},

date = {2024-08-08},

journal = {ACS Omega},

volume = {0},

number = {0},

pages = {null},

abstract = {Using first-principles calculations, density functional theory, and the tight-binding method, we investigate the optoelectronic properties of two-dimensional gallium phosphide (2D GaP). Our investigation covers electronic properties, such as band structure and electronic band gap, and optical properties, including absorption spectra, refractive index, and reflectivity, considering excitonic effects. Additionally, structural aspects such as stability, elastic properties, and Raman and infrared spectra are also analyzed. This comprehensive study brings up valuable insights into 2D GaP physics, evincing the key features that make it a potential material for optoelectronic applications, such as photodetectors and solar cells.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{PhysRevB.108.035421,

title = {Tunable properties of excitons in double monolayer semiconductor heterostructures},

author = {Luiz G. M. Tenório and Teldo A. S. Pereira and K. Mohseni and T. Frederico and M. R. Hadizadeh and Diego R. Costa and André J. Chaves},

url = {https://link.aps.org/doi/10.1103/PhysRevB.108.035421},

doi = {10.1103/PhysRevB.108.035421},

year  = {2023},

date = {2023-07-01},

journal = {Phys. Rev. B},

volume = {108},

issue = {3},

pages = {035421},

publisher = {American Physical Society},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Craco2023,

title = {Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder},

author = {L. Craco and S. S. Carara and E. da Silva Barboza and Milorad V. Milošević and Teldo A. S. Pereira},

doi = {10.1039/d3ra00898c},

issn = {2046-2069},

year  = {2023},

date = {2023-06-09},

urldate = {2023-06-09},

journal = {RSC Adv.},

volume = {13},

number = {26},

pages = {17907--17913},

publisher = {Royal Society of Chemistry (RSC)},

abstract = {Crystal structure of cubic BAs bulk crystal. B and As are represented as small and large spheres, respectively.},

keywords = {General Chemical Engineering, General Chemistry},

pubstate = {published},

tppubtype = {article}

}